Scope of the Conference
The conference will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions and an industrial exhibition. The first conference is a combination of the Topical Workshop on III-V Nitrides held in Nagoya, Japan and the MRS Intl Symposium on Gallium Nitride and Related Materials held in Boston, USA in 1995. The twelve conferences were held in Tokushima, Japan (ICNS-2 1997); Montpellier, France (ICNS-3 1999); Denver, USA (ICNS-4 2001); Nara, Japan (ICNS-5 2003); Bremen, Germany (ICNS-6 2005); Las Vegas, USA (ICNS-7 2007), Jeju, Korea (ICNS-8 2009); Glasgow, UK (ICNS-9 2011); Washington DC, USA (ICNS-10 2013), Beijing, China (ICNS-11 2015); Strasbourg, France (ICNS-12 2017) and Bellevue, USA (ICNS-13 2019).
ICNS-14 will be organized as a combination of several independent sessions. In each session, in-depth discussions will be held on a focused aspect of the essential physics and chemistry underlying the critical issues associated with nitride semiconductors. Such scientific activities will contribute to the breakthrough of the critical technological barriers that need to be overcome to improve the performances of nitride devices. Format of the Conference ICNS-14 will start with an introductory plenary session in which the current status and trends of nitride materials research and device development will be reviewed to set a basis for discussions during the conference. The following parallel topical sessions, which include sessions covering growth, characterization, and devices, will provide opportunities for in-depth discussions. The topical sessions will offer a strong program of invited/contributed talks and poster presentations covering the newest results on all the aspects of nitrides such as material processing, physics, devices, theory, and novel concepts.